Analysis of SiO2 Thin Films Deposited by PECVD Using an Oxygen-TEOS-Argon Mixture

This study analyses the in uence of the argon ow on the Plasma Enhanced Chemical Vapor Deposition (PECVD) of silicon oxide thin lms by using TEOS as silicon source. The argon ow increases the deposition rate, however it also can creates some defects in the deposited lm. Several characterization techniques were used to analyze the deposited lms. The presence of argon, in the gas phase, modi es the plasma composition, the surface roughness of silicon wafer, and the surface reaction. The optimum argon ow ranges between 65 and 80 sccm to obtain a silicon oxide thin lm with high quality in terms of refractive index, smoothness, and uniformity.